REFRACTIVE-INDEX DATA FROM GAXIN1-XASYP1-Y FILMS

被引：72

作者：

CHANDRA, P

COLDREN, LA

STREGE, KE

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 01期

关键词：

D O I：

10.1049/el:19810005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：6 / 7

页数：2

共 8 条

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J].

AFROMOWITZ, MA .

SOLID STATE COMMUNICATIONS, 1974, 15 (01) :59-63

[2] SIMPLE OPTICAL-ABSORPTION SPECTROMETER SUITABLE FOR MEASUREMENTS AT LOW-TEMPERATURES [J].

MOLLENAUER, LF ;

OLSON, DH .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (06) :677-679

[3] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J].

NAHORY, RE ;

POLLACK, MA ;

JOHNSTON, WD ;

BARNS, RL .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :659-661

[4] THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS [J].

NAHORY, RE ;

POLLACK, MA .

ELECTRONICS LETTERS, 1978, 14 (23) :727-729

[5]

STREGE KE, UNPUBLISHED

[6] GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS AT 1.3 MU-M WAVELENGTH [J].

UTAKA, K ;

SUEMATSU, Y ;

KOBAYASHI, K ;

KAWANISHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :L137-L140

[7] BEHAVIOR OF ELECTRONIC DIELECTRIC CONSTANT IN COVALENT AND IONIC MATERIALS [J].

WEMPLE, SH ;

DIDOMENI.M .

PHYSICAL REVIEW B, 1971, 3 (04) :1338-&

[8]

WILLIARDSON RK, 1967, SEMICONDUCTORS SEMIM, V3, P138

← 1 →