EFFECT OF SUBSTRATE TEMPERATURES AND ANNEALING ON OPTICALLY DETECTED MAGNETIC-RESONANCE IN GLOW-DISCHARGE AMORPHOUS SILICON

被引：5
作者：
MORIGAKI, K
CAVENETT, BC
DAWSON, P
NITTA, S
SHIMAKAWA, K
机构：
[1] UNIV HULL,DEPT PHYS,HULL HU6 7RX,N HUMBERSIDE,ENGLAND
[2] GIFU UNIV,FAC ENGN,KAKAMIGAHARA,GIFU 504,JAPAN
来源：
SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 09期
关键词：
D O I：
10.1016/0038-1098(79)90757-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Optically detected magnetic resonance experiments have been performed at 2 K in glow-discharge amorphous silicon with different substrate temperatures. Effects of annealing and illumination on ODMR have been examined. A broad line is interpreted in terms of a three-centre bond model. © 1979.
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收藏
页码：795 / 799
页数：5
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