HIGHLY UNIFORM, HIGH-PURITY GAAS EPITAXIAL LAYER GROWN BY MBE USING TRIETHYLGALLIUM AND ARSENIC

被引：7

作者：

SAITO, J ^{[1
]}

ONO, K ^{[1
]}

NANBU, K ^{[1
]}

ISHIKAWA, T ^{[1
]}

KONDO, K ^{[1
]}

机构：

[1] FUJITSU LABS LTD, ATSUGI 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 06期

关键词：

D O I：

10.1143/JJAP.27.L1144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1144 / L1147

页数：4

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