INTERBAND DIELECTRIC PROPERTIES OF SOLIDS IN AN ELECTRIC FIELD

被引:90
作者
ASPNES, DE
HANDLER, P
BLOSSEY, DF
机构
来源
PHYSICAL REVIEW | 1968年 / 166卷 / 03期
关键词
D O I
10.1103/PhysRev.166.921
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:921 / &
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共 39 条
[11]   OPTICAL ABSORPTION IN ELECTRIC FIELD [J].
CALLAWAY, J .
PHYSICAL REVIEW, 1964, 134 (4A) :A998-+
[12]  
CALLAWAY J, 1966, PHYS REV, V143, P564
[13]   ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J].
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW, 1966, 142 (02) :530-&
[14]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[15]  
CARDONA M, SOLID STATE PHYSICS
[16]   PHONON-ASSISTED ELECTROABSORPTION [J].
CHESTER, M ;
FRITSCHE, L .
PHYSICAL REVIEW, 1965, 139 (2A) :A518-&
[17]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[18]   FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J].
DRESSELHAUS, G ;
DRESSELHAUS, MS .
PHYSICAL REVIEW, 1967, 160 (03) :649-+
[19]   INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1957, 108 (06) :1384-1389
[20]  
FRANZ W, 1958, Z NATURFORSCH, VA 13, P484