INCOMPLETE MELTING OF THE SI(001) SURFACE - A PHOTOELECTRON DIFFRACTION STUDY

被引：28

作者：

FRAXEDAS, J

FERRER, S

COMIN, F

机构：

[1] European Synchrotron Radiation Facility, Grenoble, Cedex, F-38043

来源：

EUROPHYSICS LETTERS | 1994年 / 25卷 / 02期

关键词：

D O I：

10.1209/0295-5075/25/2/007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A high-energy photoelectron diffraction study of Si(001) at different temperatures reveals that at about 1400 K a surface phase transition occurs. It has been interpreted as being an incomplete melting. The thickness of the liquid film is estimated to be about 2 angstrom (or two atomic layers) on the basis of single-scattering cluster calculations.

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页码：119 / 124

页数：6

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