DIRECT OBSERVATION OF AN ANODIC FILM ON A SPUTTER-DEPOSITED AMORPHOUS AL-W ALLOY

被引：45

作者：

HABAZAKI, H ^{[1
]}

SKELDON, P ^{[1
]}

THOMPSON, GE ^{[1
]}

WOOD, GC ^{[1
]}

SHIMIZU, K ^{[1
]}

机构：

[1] KEIO UNIV,DEPT CHEM,YOKOHAMA,KANAGAWA 223,JAPAN

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1995年 / 71卷 / 01期

关键词：

D O I：

10.1080/01418639508240294

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of barrier-type anodic films on sputter-deposited amorphous Al-30W (at.%) alloy has been studied for the first time to elucidate ionic transport mechanisms across the film and associated interfaces. The film, grown with high Faradaic efficiency at 50 A m-2 to 150 V in aqueous 0.01 M ammonium pentaborate electrolyte at 293 K, comprises two main layers of relatively uniform composition and with flat, parallel and sharp interfaces: an outer layer, representing about 15% of the film thickness and composed of tungsten-free anodic alumina, and an inner layer containing both aluminium and tungsten in an amorphous structure based on groupings of Al2O3 and WO3. The two layers form as a consequence of the slower migration of tungsten species in the film compared with that of Al3+ ions. The inner layer has, as expected on compositional grounds, a lower ionic resistivity than the outer layer; yet, contrary to predictions, film formation proceeds in a uniform manner, i.e. without current channelling. Aluminium and tungsten are incorporated into the film at the alloy-film interface in their alloying proportions within the limitations of the measurements.

引用

页码：81 / 90

页数：10

共 17 条

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