HOT-ELECTRON NOISE EFFECTS IN BURIED CHANNEL MOSFETS

被引：5
|
作者：
KIM, SK
VANDERZIEL, A
LIU, ST
机构：
[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
[2] HONEYWELL INC,CTR CORP TECHNOL,BLOOMINGTON,MN 55420
来源：
SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 05期
关键词：
D O I：
10.1016/0038-1101(81)90040-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：425 / 428
页数：4
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