STEADY-STATE TRAPPING, DETRAPPING, AND RECOMBINATION PROCESSES IN SEMICONDUCTORS WITH CONTINUOUS GAP STATES

被引：0
|
作者：
LIU, JZ
机构：
[1] NEC Research Institute, Princeton, NJ 08540
来源：
SOLID STATE COMMUNICATIONS | 1993年 / 86卷 / 01期
关键词：
D O I：
10.1016/0038-1098(93)90246-J
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An analysis of the steady-state trapping, detrapping, and recombination processes in semiconductors with continuous gap states has provided a new formalism to view theses processes and resolved the discrepancy on steady-state recombination demarcation levels between the Rose model and the Simmons-Taylor model.
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页码：47 / 50
页数：4
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