OPTICAL DETERMINATION OF MOBILITY AND CARRIER CONCENTRATION IN HEAVILY DOPED POLYCRYSTALLINE SILICON

被引:39
作者
MISHIMA, Y
HIROSE, M
OSAKA, Y
机构
关键词
D O I
10.1063/1.327733
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1157 / 1159
页数:3
相关论文
共 12 条
[1]   OPTICAL EFFECTS IN BULK SILICON AND GERMANIUM [J].
BRIGGS, HB .
PHYSICAL REVIEW, 1950, 77 (02) :287-287
[2]  
BRODSKY MH, 1970, PHYS REV B, V1, P2565
[3]   SILICON GATE TECHNOLOGY [J].
FAGGIN, F ;
KLEIN, T .
SOLID-STATE ELECTRONICS, 1970, 13 (08) :1125-&
[4]   ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].
HIROSE, M ;
TANIGUCHI, M ;
OSAKA, Y .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :377-382
[5]  
IIZUKA H, 1973, J JAPAN SOC APPL P S, V42, P158
[6]  
IIZUKA H, 1972, 4TH P C SOL STAT DEV
[7]   CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE-SILICON FILMS [J].
KAMINS, TI .
IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04) :221-229
[8]   TECHNOLOGY FOR MONOLITHIC HIGH-POWER INTEGRATED-CIRCUITS USING POLYCRYSTALLINE SI FOR COLLECTOR AND ISOLATION WALLS [J].
KOBAYASHI, I .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :399-404
[9]   EFFECT OF DOPING ON ELECTRON SPIN RESONANCE IN PHOSPHORUS DOPED SILICON .3. ABSORPTION INTENSITY [J].
KODERA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 26 (02) :377-&
[10]   P-N-JUNCTIONS IN POLYCRYSTALLINE-SILICON FILMS [J].
MANOLIU, J ;
KAMINS, TI .
SOLID-STATE ELECTRONICS, 1972, 15 (10) :1103-&