LO-PHONON GENERATION WITH ENERGY COLLISION BROADENING IN POLAR SEMICONDUCTORS

被引：6
作者：
KRAL, K
机构：
[1] Institute of Physics, Czechoslovak Academy of Sciences
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1992年 / 170卷 / 02期
关键词：
D O I：
10.1002/pssb.2221700219
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The generation of LO-phonons in the process of the hot electron cooling in polar semiconductors is studied theoretically. The generation rate formula is derived in the frame of the theory of the nonequilibrium statistical operator. The electron energy collision broadening is included in an approximation which meets the requirements of the elementary thermodynamics. Numerical results giving the generation rate and quasi-steady state LO-phonon distribution function in some materials are presented. The generalization of the generation rate formula to the case of the nonthermalized electronic system is also given.
引用
收藏
页码：537 / 547
页数：11
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