LO-PHONON GENERATION WITH ENERGY COLLISION BROADENING IN POLAR SEMICONDUCTORS

The generation of LO-phonons in the process of the hot electron cooling in polar semiconductors is studied theoretically. The generation rate formula is derived in the frame of the theory of the nonequilibrium statistical operator. The electron energy collision broadening is included in an approximation which meets the requirements of the elementary thermodynamics. Numerical results giving the generation rate and quasi-steady state LO-phonon distribution function in some materials are presented. The generalization of the generation rate formula to the case of the nonthermalized electronic system is also given.