X-RAY AND ELECTRON-MICROSCOPIC CHARACTERIZATION OF LATTICE-DEFECTS IN AIIBVI SEMICONDUCTOR COMPOUNDS

被引：6
作者：
AULEYTNER, J
LILIENTAL, Z
MIZERA, E
WARMINSKI, T
机构：
[1] Institute of Physics, Polish Academy of Sciences, Warsaw
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 55卷 / 02期
关键词：
D O I：
10.1002/pssa.2210550230
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using X‐ray diffraction and spectroscopic methods it is shown how far real semiconductors, containing Te as one of their basic structural components, are inhomogeneous. The techniques of TXT, TEM, and STEM makes it possible to specify lattice defects in some of these compounds and to correlate their presence with physical properties of these materials. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
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页码：603 / 609
页数：7
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