NUMERICAL MODELING OF HETEROJUNCTIONS INCLUDING THE THERMIONIC EMISSION MECHANISM AT THE HETEROJUNCTION INTERFACE

被引：141
作者：
HORIO, K
YANAI, H
机构：
[1] Shibaura Institute of Technology, Minato-ku, Tokyo 108, 3-9-14, Shibaura
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 04期
关键词：
D O I：
10.1109/16.52447
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A numerical model for heterojunctions is presented in which thermionic emission current is formulated at the heterojunction interface, in series with drift-diffusion current in the bulk. It is shown that the thermionic emission current at the heterojunction interface is regarded as a boundary condition to give a relation between quasi-Fermi levels at both sides of the interface. GaAs/AIGaAs heterojunctions are simulated as an example, and the results are compared with those obtained by a conventional diffusion model in which current transport across the heterojunction interface is not considered explicitly. It is shown that the thermionic emission mechanism at the interface is important and should be considered, particularly in isotype heterojunctions. According to the model presented here, more general numerical analyses including thermionic emission, drift, and diffusion phenomena can be achieved. © 1990 IEEE
引用
收藏
页码：1093 / 1098
页数：6
相关论文
共 24 条
[1]   HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].
ASBECK, PM ;
CHANG, MF ;
WANG, KC ;
MILLER, DL ;
SULLIVAN, GJ ;
SHENG, NH ;
SOVERO, E ;
HIGGINS, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2571-2579
[2]   NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
ASBECK, PM ;
MILLER, DL ;
ASATOURIAN, R ;
KIRKPATRICK, CG .
ELECTRON DEVICE LETTERS, 1982, 3 (12) :403-406
[3]  
Casey H.C., 1978, HETEROSTRUCTURE LASE
[4]   DEVICE MODELING [J].
ENGL, WL ;
DIRKS, HK ;
MEINERZHAGEN, B .
PROCEEDINGS OF THE IEEE, 1983, 71 (01) :10-33
[5]  
Horio K., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Part C, VJ69C, P232
[6]   NUMERICAL-SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH VARIOUS COLLECTOR PARAMETERS [J].
HORIO, K ;
IWATSU, Y ;
YANAI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) :617-624
[7]   HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].
KROEMER, H .
PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25
[8]   TWO-DIMENSIONAL NUMERICAL-MODEL FOR THE HIGH ELECTRON-MOBILITY TRANSISTOR [J].
LORET, D .
SOLID-STATE ELECTRONICS, 1987, 30 (11) :1197-1203
[9]   NUMERICAL-ANALYSIS OF HETEROSTRUCTURE SEMICONDUCTOR-DEVICES [J].
LUNDSTROM, MS ;
SCHUELKE, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) :1151-1159
[10]   THE DESIGN, FABRICATION, AND CHARACTERIZATION OF A NOVEL ELECTRODE STRUCTURE SELF-ALIGNED HBT WITH A CUTOFF FREQUENCY OF 45 GHZ [J].
MADIHIAN, M ;
HONJO, K ;
TOYOSHIMA, H ;
KUMASHIRO, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) :1419-1428
123