STUDIES ON FORMATION CHARACTERISTICS AND MECHANISM OF SIC ON SI AND METAL-SILICIDES BY USING ION BACKSCATTERING TECHNIQUES

The formation characteristics and mechanism of SiC on Si and metal silicides have been studied by backscattering and channeling effect techniques. It is concluded that whereas the composition ratios of SiC layer are close to unity for all cases, the growth rates are different for different cases. The qualities of SiC layers have also been evaluated by reflection electron diffraction analysis as well as by channeling effect technique. The results indicate that SiC layer on Si is single crystal in nature, SiC layer on TiSi2 has a preferential orientation and SiC layer on NiSi2 is amorphous or composed of polycrystals. © 1979 The Japan Society of Applied Physics.