INGAAS/INP GRADED-INDEX QUANTUM-WELL LASERS WITH NEARLY IDEAL STATIC CHARACTERISTICS

被引：29
作者：
TEMKIN, H
TANBUNEK, T
LOGAN, RA
LEWIS, JA
DUTTA, NK
机构：
[1] AT and T Bell Laboratories, Murray Hill
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期
关键词：
D O I：
10.1063/1.102521
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have examined static properties of step and continuously graded single and multiple quantum well InGaAs/InP lasers grown by atmospheric pressure metalorganic vapor phase epitaxy. Systematic changes in the band gap of InGaAsP waveguide layers have resulted in lasers with low threshold current (<10 mA), high quantum efficiency (26% per facet) and power output (∼70 mW), and the effective loss of 2-5 cm-1. We show that the changes in threshold current in short lasers can be explained by a switch from the n=1 to n=2 level. The level switching results in a very flat and wide (>1000 Å) gain profile.
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页码：1222 / 1224
页数：3
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