DYNAMICS OF LASER-INDUCED FORMATION OF PALLADIUM SILICIDE

被引：41

作者：

ALLMEN, MV

WITTMER, M

机构：

[1] UNIV BERN,INST APPL PHYS,CH-3012 BERN,SWITZERLAND

[2] BROWN BOVERI RES CTR,CH-5405 BADEN,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 01期

关键词：

D O I：

10.1063/1.90561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of palladium silicide by laser irradiation of a thin Pd film evaporated on single-crystal silicon has been studied. We used 18-ns pulses from a Q-switched Nd: YAG laser to induce the reaction. The process of laser-induced silicide formation takes place through interdiffusion of the molten elements, followed by thermal quenching. A diffusion constant of 4×10-4 cm2/s was estimated. The reacted layer was found to consist of a mixture of different metal-silicon compounds.

引用

页码：68 / 70

页数：3

共 12 条

[1]

ALLMEN MV, UNPUBLISHED

[2]

BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[3] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J].