METAL CONTACTS TO GAAS WITH 1 EV SCHOTTKY-BARRIER HEIGHT

被引：37

作者：

WALDROP, JR

GRANT, RW

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 21期

关键词：

D O I：

10.1063/1.99628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1794 / 1796

页数：3

共 12 条

[1] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[2] VARIATION OF N-GAAS (100) INTERFACE FERMI LEVEL BY GE AND SI OVERLAYERS [J].

GRANT, RW ;

WALDROP, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1015-1019

[3] CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION [J].

GRANT, RW ;

WALDROP, JR ;

KOWALCZYK, SP ;

KRAUT, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :477-480

[4] THE SI/GAAS(110) HETEROJUNCTION DISCONTINUITY - AMORPHOUS VERSUS CRYSTALLINE OVERLAYERS [J].

LIST, RS ;

WOICIK, J ;

MAHOWALD, PH ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1459-1463

[5]

RHODERICK E, 1977, METAL SEMICONDUCTOR

[6] HIGHLY ELECTRONEGATIVE CONTACTS TO COMPOUND SEMICONDUCTORS [J].

SCRANTON, RA ;

BEST, JS ;

MCCALDIN, JO .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :930-934

[7] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].

SHANNON, JM .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :537-543

[8] A LARGE BARRIER HEIGHT SCHOTTKY CONTACT BETWEEN AMORPHOUS SI-GE-B AND GAAS [J].

SUZUKI, M ;

MURASE, K ;

ASAI, K ;

KURUMADA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11) :L709-L711

[9] ELECTRICAL-PROPERTIES OF IDEAL METAL CONTACTS TO GAAS - SCHOTTKY-BARRIER HEIGHT [J].

WALDROP, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :445-448

[10] EFFECT OF GROWTH SEQUENCE ON THE BAND DISCONTINUITIES AT ALAS/GAAS (100) AND (110) HETEROJUNCTION INTERFACES [J].

WALDROP, JR ;

GRANT, RW ;

KRAUT, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1209-1214

← 1 2 →