PHOTOACOUSTIC OPTICAL AND THERMAL CHARACTERIZATION OF SI AND GAAS ION-IMPLANTED LAYERS

被引：31
|
作者：
ZAMMIT, U [1 ]
MARINELLI, M [1 ]
SCUDIERI, F [1 ]
MARTELLUCCI, S [1 ]
机构：
[1] CNR,NAZL ELETTRON QUANTIST & PLASMI GRP,I-00185 ROMA,ITALY
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 13期
关键词：
D O I：
10.1063/1.98058
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：830 / 832
页数：3
相关论文
共 50 条
  • [21] Characterization Techniques for Ion-Implanted Layers in Silicon
    Polignano, Maria Luisa
    Codegoni, Davide
    Galbiati, Amos
    Grasso, Salvatore
    Mica, Isabella
    Basa, Peter
    Pongracz, Anita
    Kiss, Zoltan Tamas
    Nadudvari, Gyorgy
    2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018), 2018, : 144 - 152
  • [22] SELF-ANNEALING IN ION-IMPLANTED SI AND GAAS
    KOMAROV, FF
    VACUUM, 1991, 42 (1-2) : 101 - 106
  • [23] NONDESTRUCTIVE TOPOGRAPHIC EVALUATION OF ION-IMPLANTED LAYERS ON GAAS SUBSTRATES BY OPTICAL-ABSORPTION
    WINDSCHEIF, J
    WETTLING, W
    JANTZ, W
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 47 (02): : 115 - 118
  • [24] ELECTRICAL AND CATHODOLUMINESCENCE MEASUREMENTS ON ION-IMPLANTED DONOR LAYERS IN GAAS
    WOODCOCK, JM
    SHANNON, JM
    CLARK, DJ
    SOLID-STATE ELECTRONICS, 1975, 18 (03) : 267 - 275
  • [25] REVIEW OF RAPID THERMAL ANNEALING OF ION-IMPLANTED GAAS
    GILL, SS
    SEALY, BJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) : 2590 - 2596
  • [26] OPTICAL MEASUREMENT OF THE DISTRIBUTION OF DAMAGE IN ION-IMPLANTED GAAS
    KRAISINGDECHA, P
    SHWE, C
    GAL, M
    TAN, HH
    JAGADISH, C
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (08) : 1489 - 1492
  • [27] Optical studies of graphitized layers in ion-implanted diamond
    Khmelnitskiy, R.A.
    Dravin, V.A.
    Gippius, A.A.
    Journal of Wide Bandgap Materials, 1996, 5 (02): : 121 - 125
  • [28] CHARACTERIZATION OF CA+ ION-IMPLANTED GAAS BY PHOTOLUMINESCENCE
    SHEN, HL
    MAKITA, Y
    KIMURA, S
    TANOUE, H
    YAMADA, A
    SHIBATA, H
    OBARA, A
    SAKURAGI, S
    APPLIED PHYSICS LETTERS, 1994, 65 (11) : 1427 - 1429
  • [29] MODELING AND CHARACTERIZATION OF ION-IMPLANTED GAAS-MESFETS
    PECZALSKI, A
    CHEN, CH
    SHUR, MS
    BAIER, SM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 726 - 732
  • [30] Surface- and microanalytical characterization of ion-implanted Si-C-N layers
    H. Klewe-Nebenius
    M. Bruns
    H. Lutz
    H. Baumann
    F. Link
    K. Bethge
    Fresenius' Journal of Analytical Chemistry, 1998, 361 : 630 - 633
12345