CHARACTERISTICS OF THERMAL ANNEALING OF RADIATION DAMAGE IN MOSFETS

被引：64

作者：

DANCHENKO, V

DESAI, UD

BRASHEARS, SS

机构：

[1] National Aeronautics and Space Administration, Goddard Space Flight Center, Greenbelt, MD

[2] Electro-Mechanical Research, Inc., College Park, MD

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.1656570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal annealing characteristics of radiation damage in p-channel MOSFETS due to irradiation by 1.5 MeV electrons as a function of time and temperature are presented. Both isothermal and isochronal annealing curves are analyzed and it is found that the activation energy of the annealing processes has a distribution in a range of 1 eV with the peak at about 1 eV. The mechanism of radiation damage and the model of thermal annealing in the MOSFETS are discussed. © 1968 The American Institute of Physics.

引用

页码：2417 / +

页数：1

共 23 条

[1] BRYANT FR, 1967, 5 ANN S PHYS FAIL EL, V5, P349
[2] DAMASK AC, 1963, POINT DEFECTS METALS, P145
[3] DONOVAN RP, 1967, 5 ANN S PHYS FAIL EL, V5, P199
[4] EFFECTS OF SPACE RADIATION OF MOSFET DEVICES AND SOME APPLICATION IMPLICATIONS OF THOSE EFFECTS
GORDON, F
WANNEMAC.HE
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) : 262 - &
[5] STABILIZATION OF MOS DEVICES
HOFSTEIN, SR
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +
[6] Hughes H. L., 1964, ELECTRONICS, V37, P58
[7] KOOI E, 1965, PHILIPS RES REP, V20, P595
[8] MANY A, 1965, SEMICONDUCTOR SURFAC, P210
[9] MESSENGER GC, 1965, IEEE C NUCLEAR SPACE
[10] MITCHELL JP, 1967, BELL SYST TECH J, V46, P1

← 1 2 3 →