REFLECTANCE AND OPTICAL-CONSTANTS OF CDIN2SE4 CRYSTALS

被引：7

作者：

TRYKOZKO, R ^{[1
]}

HUFFMAN, DR ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT PHYS,TUCSON,AZ 85721

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.329384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5283 / 5285

页数：3

共 50 条

[21] STRUCTURE OF THE ENERGY BANDS IN SEMICONDUCTORS OF THE CDIN2SE4 TYPE [J].

GUBANOV, AI ;

GASHIMZADE, FM .

SOVIET PHYSICS-SOLID STATE, 1960, 2 (02) :236-241

[22] Electrochemically deposited photoactive CdIn2Se4 thin films:: Structural and optical studies [J].

Ahn, Ju-Hyun ;

Cai, Gangri ;

Mane, Rajararn S. ;

Todkar, V. V. ;

Shaikh, Arif V. ;

Chung, Hoeil ;

Yoon, Moon-Young ;

Han, Sung-Hwan .

APPLIED SURFACE SCIENCE, 2007, 253 (21) :8588-8591

[23] LOW-TEMPERATURE PHOTOCONDUCTIVITY OF ZNIN2SE4 AND CDIN2SE4 [J].

FORTIN, E ;

RAGA, F .

SOLID STATE COMMUNICATIONS, 1974, 14 (09) :847-850

[24] TEMPERATURE-DEPENDENCE OF THE BAND-GAP IN CDIN2SE4 [J].

CHIZHIKOV, VI ;

PANYUTIN, VL ;

PONEDELNIKOV, BE ;

ROZENSON, AE .

JOURNAL DE PHYSIQUE, 1981, 42 (07) :1039-1044

[25] On the structural, electronic, optical and thermoelectric properties of CdIn2Se4 ordered-vacancy compound [J].

Hoat, D. M. ;

Naseri, Mosayeb ;

Ponce-Perez, R. ;

Rivas-Silva, J. F. ;

Cocoletzi, Gregorio H. .

JOURNAL OF SOLID STATE CHEMISTRY, 2020, 282

[26] ORDERED-VACANCY-COMPOUND SEMICONDUCTORS - PSEUDOCUBIC CDIN2SE4 [J].

BERNARD, JE ;

ZUNGER, A .

PHYSICAL REVIEW B, 1988, 37 (12) :6835-6856

[27] RADIATIVE RECOMBINATION IN CDIN2SE4 - PHOTO-LUMINESCENCE SPECTRA [J].

GRILLI, E ;

GUZZI, M ;

KAI, GY ;

MAPELLI, L .

LETTERE AL NUOVO CIMENTO, 1982, 33 (09) :246-250

[28] Structural and Vibrational Study of Pseudocubic CdIn2Se4 under Compression [J].

Santamaria-Perez, David ;

Gomis, Oscar ;

Pereira, Andre L. J. ;

Vilaplana, Rosario ;

Popescu, Catalin ;

Angel Sans, Juan ;

Javier Manjon, Francisco ;

Rodriguez-Hernandez, Placida ;

Munoz, Alfonso ;

Ursaki, Vladislav V. ;

Tiginyanu, Ion M. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (46) :26987-26999

[29] ELECTRONIC PROPERTIES OF DEFECT-ZINCBLENDE SEMICONDUCTOR CDIN2SE4 [J].

BALDERESCHI, A ;

MELONI, F ;

AYMERICH, F ;

MULA, G .

SOLID STATE COMMUNICATIONS, 1977, 21 (01) :113-116

[30] INTERFACE CAPACITY AND FLAT-BAND POTENTIAL OF CDIN2SE4 AND CDCR2SE4 [J].

SAVADOGO, O ;

YAZBECK, J ;

DESCHANVRES, A .

ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1984, 9 (02) :145-152

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