X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF SUBMONOLAYER NATIVE OXIDES ON HF-TREATED SI SURFACES

This article investigates, by a novel spectral analysis technique, the possibility of applying conventional x-ray photoelectron spectroscopy to characterize the initial oxidation process. Quantitative analysis of submonolayer native oxides is made possible by spectral decomposition of Si 2p into Si4+, Si-x+, and Si0+ based on the O Is binding energy, and by calculation of the SiO2 and SiOx thicknesses using the decomposition results. Here, the sensitivity for oxide-thickness change is about 1/10 monolayer. Using this technique, the initial oxidation processes of HF-treated Si(lll) and Si(100) are precisely characterized. The influence of the dissolved-oxygen concentration in the HF solution is also investigated. (C) 1995 American Vacuum Society.