CHARACTERIZATION OF FERROELECTRIC BAMGF4 FILMS GROWN ON ALGAAS/GAAS(100) HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES

被引：6

作者：

OHMI, SI

TOKUMITSU, E

ISHIWARA, H

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama, 227, 4259 Nagatsuta, Midori-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/0022-0248(95)80110-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ferroelectric BaMgF4 films have been grown on AlGaAs/GaAs(100) high-electron-mobility transistor (HEMT) structures. BaMgF4 films in which the direction of spontaneous polarization has a finite angle to the substrate surface can be obtained on the HEMT structure at growth temperatures of 500-600 degrees C, However, it is shown that the growth temperature is limited to about 550 degrees C, because the AlGaAs/GaAs interface becomes disordered by the diffusion of Mg atoms into the HEMT structure when the growth temperature is 600 degrees C.

引用

页码：1104 / 1107

页数：4