Characterization of Mg+F, Mg+Ar dual ion implanted AlxGa1-xAs (0<=x<=0.75) layers

We investigated Mg+F and Mg+Ar dual ion implantation into AlGaAs. F dual implantation suppresses Mg diffusion but degrades electrical properties. This is more apparent in AlGaAs with a lower Al fraction. Ar dual implantation suppresses Mg diffusion and improves the electrical properties of AlGaAs with a high Al fraction. We propose models for dual ion implantation. Mg-F bonds formed as a result of F dual implantation and successive annealing suppress Mg diffusion and disturb Mg activation. The large radiation damage caused by Ar dual implantation induces Mg atoms to occupy lattice sites in AlGaAs with a high Al fraction.