REDUCED PHOSPHORUS LOSS FROM INP SURFACE DURING HYDROGEN PLASMA TREATMENT

被引：13

作者：

BALASUBRAMANIAN, S ^{[1
]}

KUMAR, V ^{[1
]}

BALASUBRAMANIAN, N ^{[1
]}

机构：

[1] INDIAN TELEPHONE IND,MICROELECTR LAB,BANGALORE 560016,INDIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 13期

关键词：

D O I：

10.1063/1.111835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new method for plasma hydrogenation of InP with a reduced phosphorus loss is reported. The loss of P from InP surface is suppressed by the use of a sacrificial InP wafer kept directly in the plasma while the test sample is kept away from it in a downstream geometry. It is shown using photoluminescence that the P vacancy related transitions are considerably reduced for InP hydrogenated in the presence of a sacrificial wafer when compared to the one hydrogenated without it. The results suggest the utility of the sacrificial InP wafer in providing a P overpressure during H plasma exposure.

引用

页码：1696 / 1698

页数：3