REDUCED PHOSPHORUS LOSS FROM INP SURFACE DURING HYDROGEN PLASMA TREATMENT

被引：13
作者：
BALASUBRAMANIAN, S [1 ]
KUMAR, V [1 ]
BALASUBRAMANIAN, N [1 ]
机构：
[1] INDIAN TELEPHONE IND,MICROELECTR LAB,BANGALORE 560016,INDIA
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 13期
关键词：
D O I：
10.1063/1.111835
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new method for plasma hydrogenation of InP with a reduced phosphorus loss is reported. The loss of P from InP surface is suppressed by the use of a sacrificial InP wafer kept directly in the plasma while the test sample is kept away from it in a downstream geometry. It is shown using photoluminescence that the P vacancy related transitions are considerably reduced for InP hydrogenated in the presence of a sacrificial wafer when compared to the one hydrogenated without it. The results suggest the utility of the sacrificial InP wafer in providing a P overpressure during H plasma exposure.
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页码：1696 / 1698
页数：3
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