EPITAXIAL-GROWTH OF BAMGF4 FILMS ON SI(100) AND (111) SUBSTRATES - AN APPROACH TO FERROELECTRIC SEMICONDUCTOR HETEROSTRUCTURES

被引：14

作者：

AIZAWA, K ^{[1
]}

ISHIWARA, H ^{[1
]}

KUMAGAI, M ^{[1
]}

机构：

[1] KANAGAWA HIGH TECHNOL FDN,MAT CHARACTERIZAT LAB,TAKATSU KU,KAWASAKI 213,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 13期

关键词：

D O I：

10.1063/1.110681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of BaMgF4 films on both Si(100) and (111) substrates has been attempted using molecular beam epitaxy. (011) - and (120)-oriented epitaxial films are successfully grown at temperatures approximately 500-degrees-C on Si (100) and (111) substrates, respectively. It has been found that the best channeling minimum yield in Rutherford backscattering spectrometry is about 0.55 for a BaMgF4(120) film on Si(111), and that the films are composed of crystallites whose orientations reflect the substrate symmetry.

引用

页码：1765 / 1767

页数：3

共 11 条

[1] FORMATION OF FERROELECTRIC BAMGF4 FILMS ON GAAS SUBSTRATES [J].

AIZAWA, K ;

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9B) :3232-3234

[2]

HIGUMA Y, 1977, JPN J APPL PHYS, V17, P209

[3] PROPOSAL OF ADAPTIVE-LEARNING NEURON CIRCUITS WITH FERROELECTRIC ANALOG-MEMORY WEIGHTS [J].

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B) :442-446

[4] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[5] FERROELECTRIC SWITCHING OF A FIELD-EFFECT TRANSISTOR WITH A LITHIUM-NIOBATE GATE INSULATOR [J].

ROST, TA ;

LIN, H ;

RABSON, TA .

APPLIED PHYSICS LETTERS, 1991, 59 (27) :3654-3656

[6] GROWTH AND THE MICROSTRUCTURAL AND FERROELECTRIC CHARACTERIZATION OF ORIENTED BAMGF4 THIN-FILMS [J].

SINHAROY, S ;

BUHAY, H ;

BURKE, MG ;

LAMPE, DR ;

POLLAK, TM .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1991, 38 (06) :663-671

[7] GROWTH AND CHARACTERIZATION OF FERROELECTRIC BAMGF4 FILMS [J].

SINHAROY, S ;

BUHAY, H ;

FRANCOMBE, MH ;

TAKEI, WJ ;

DOYLE, NJ ;

RIEGER, JH ;

LAMPE, DR ;

STEPKE, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :409-413

[8]

SUGIBUCHI K, 1975, J APPL PHYS, V40, P2871

[9] MEMORY EFFECTS IN THE STRUCTURE SILICON SINGLE-CRYSTAL - FERROELECTRIC FILM [J].

TOLSTOUSOV, S ;

MUKHORTOV, V ;

DUDKEVICH, V ;

FESENKO, E .

FERROELECTRICS LETTERS SECTION, 1983, 1 (02) :51-56

[10]

WU SY, 1974, IEEE T ELECTRON DEV, VED21, P499

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