OPTICAL ANALYSIS OF INAS HETEROSTRUCTURES GROWN BY MIGRATION-ENHANCED EPITAXY

被引：16
|
作者：
INOUE, M
YANO, M
FURUSE, H
NASU, N
IWAI, Y
机构：
[1] New Mat. Res. Center, Osaka Inst. of Technol.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期
关键词：
D O I：
10.1088/0268-1242/8/1S/027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the interface of InAs/GaSb and InAs/AlSb grown by migration-enhanced epitaxy by photoluminescence and Raman spectroscopy. The significant effects of interface bonds, InSb or GaAs (AlAs), on the luminescence as well as phonon spectra are discussed. The confined phonon modes in both systems, InAs/GaSb and InAs/AlSb, are also compared to study the characteristic properties of InAs heterostructures.
引用
收藏
页码：S121 / S124
页数：4
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