OPTICAL ANALYSIS OF INAS HETEROSTRUCTURES GROWN BY MIGRATION-ENHANCED EPITAXY

被引：16
作者：
INOUE, M
YANO, M
FURUSE, H
NASU, N
IWAI, Y
机构：
[1] New Mat. Res. Center, Osaka Inst. of Technol.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期
关键词：
D O I：
10.1088/0268-1242/8/1S/027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the interface of InAs/GaSb and InAs/AlSb grown by migration-enhanced epitaxy by photoluminescence and Raman spectroscopy. The significant effects of interface bonds, InSb or GaAs (AlAs), on the luminescence as well as phonon spectra are discussed. The confined phonon modes in both systems, InAs/GaSb and InAs/AlSb, are also compared to study the characteristic properties of InAs heterostructures.
引用
收藏
页码：S121 / S124
页数：4
相关论文
共 18 条
[1]  
BERESDORF R, 1989, APPL PHYS LETT, V55, P1899
[2]   CALCULATED SUPERLATTICE AND INTERFACE PHONONS OF INAS/GASB SUPERLATTICES [J].
FASOLINO, A ;
MOLINARI, E ;
MAAN, JC .
PHYSICAL REVIEW B, 1986, 33 (12) :8889-8891
[3]   CALCULATED LONGITUDINAL SUPERLATTICE AND INTERFACE PHONONS OF INAS/GASB SUPERLATTICES [J].
FASOLINO, A ;
MOLINARI, E ;
MAAN, JC .
SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (02) :117-120
[4]   POLYMERIZATION OF ANILINES BY THE USE OF COPPER(II) PERCHLORATE AS AN OXIDATIVE COUPLING AGENT [J].
INOUE, M ;
BROWN, F ;
MUNOZ, IC ;
MUNOZ, FO .
POLYMER BULLETIN, 1991, 26 (04) :403-408
[5]  
IWAI Y, 1992, 5TH C MOD SEM STRUCT, V267, P434
[6]   PHONONS AT NONPLANAR (III-V) SEMICONDUCTOR HETEROJUNCTIONS .2. GASB/INAS (001) [J].
KECHRAKOS, D ;
INKSON, JC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (03) :155-159
[7]  
LOPEZ C, 1992, 5TH C MOD SEM STRUCT, V267, P176
[8]  
Rytov S., 1956, SOV PHYS ACOUST, V2, P68
[9]   OPTICAL-ABSORPTION OF IN1-XGAXAS-GASB1-YASY SUPER-LATTICES [J].
SAIHALASZ, GA ;
CHANG, LL ;
WELTER, JM ;
CHANG, CA ;
ESAKI, L .
SOLID STATE COMMUNICATIONS, 1978, 27 (10) :935-937
[10]   NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE BASED ON RESONANT INTERBAND TUNNELING [J].
SODERSTROM, JR ;
CHOW, DH ;
MCGILL, TC .
APPLIED PHYSICS LETTERS, 1989, 55 (11) :1094-1096
12