GIANT, TRIPLY RESONANT, 3RD-ORDER NONLINEAR SUSCEPTIBILITY-CHI-3-OMEGA(3) IN COUPLED QUANTUM-WELLS

被引：188
作者：
SIRTORI, C
CAPASSO, F
SIVCO, DL
CHO, AY
机构：
[1] AT and T Bell Laboratories, Murray Hill, NJ 07974
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 07期
关键词：
D O I：
10.1103/PhysRevLett.68.1010
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new coupled-quantum-well semiconductor with triply resonant third-order nonlinear susceptibility chi-3-omega(3) has been designed and demonstrated using AlInAs/GaInAs heterostructures grown by molecular-beam epitaxy. In order to maximize \chi-3-omega(3)\ our structure has been tailored in such a way to maximize the product of the dipole matrix elements of the relevant intersubband transitions while maintaining nearly equal spacing between the electronic bound states of the quantum wells. Experimental values of \chi-3-omega(3)\ as high as congruent-to 1 x 10(-14) (m/V)2 at 10.7-mu-m pump wavelength have been obtained, in agreement with theoretical estimates.
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页码：1010 / 1013
页数：4
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