A STUDY OF SINGLE-FREQUENCY QUENCHED-DOMAIN MODE GUNN-EFFECT OSCILLATOR

被引：17
作者：
KHANDELWAL, DD
CURTICE, WR
机构：
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1970年 / MT18卷 / 04期
关键词：
D O I：
10.1109/TMTT.1970.1127187
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：178 / +
页数：1
相关论文
共 21 条
[1]   HIGH-POWER QUENCHED GUNN OSCILLATORS [J].
BARBER, MR .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (04) :752-+
[2]   STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].
BUTCHER, PN ;
FAWCETT, W .
BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (11) :1425-&
[3]   CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].
BUTCHER, PN ;
FAWCETT, W .
PHYSICS LETTERS, 1966, 21 (05) :489-&
[4]   A LOW-FREQUENCY ANALOG FOR A GUNN-EFFECT OSCILLATOR [J].
CARROLL, JE ;
GIBLIN, RA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (10) :640-+
[5]  
CARROLL JE, 1966, ELECTRON LETT, V2, P141
[6]  
CHEN WT, 1968, RADCTR67663 CORN U T
[7]   THEORETICAL STUDY OF A GUNN DIODE IN A RESONANT CIRCUIT [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) :55-+
[8]  
DALMAN GC, 1966, 6 P INT C MICR OPT G, P319
[9]   A LARGE-SIGNAL ANALYSIS OF IMPATT DIODES [J].
EVANS, WJ ;
HADDAD, GI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) :708-+
[10]   INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].
GUNN, JB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&
123