CADMIUM TELLURIDE SURFACE BARRIER DETECTORS

被引：22

作者：

CORNET, A

SIFFERT, P

COCHE, A

TRIBOULE.R

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 10期

关键词：

D O I：

10.1063/1.1653259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：432 / &

共 14 条

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[2]

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[3]

BROWN WL, 1966, SEMICONDUCTOR MATERI

[4] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J].

KAHNG, D .

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[5]

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[6] GENERATION-RECOMBINATION MECHANISM IN CADMIUM TELLURIDE P-N JUNCTIONS [J].

LANCON, R ;

MARFAING, Y .

JOURNAL DE PHYSIQUE, 1969, 30 (01) :97-&

[7] HIGH-PURITY CDTE BY SEALED-INGOT ZONE REFINING [J].

LORENZ, MR ;

HALSTED, RE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) :343-344

[8]

LORENZ MR, 1964, PHYS REV, V134, P751

[9] EVALUTATION OF CDTE BY NUCLEAR PARTICLE MEASUREMENTS [J].

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :296-+

[10]

MAYER JW, 1968, SEMICONDUCTOR DETECT

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