MODEL OF LASER-INDUCED REGULAR AND CHAOTIC OSCILLATIONS IN AMORPHOUS GESE2 FILMS

被引：3
作者：
HAJTO, J [1 ]
JANOSSY, I [1 ]
CHOI, WK [1 ]
OWEN, AE [1 ]
机构：
[1] HUNGARIAN ACAD SCI,CENT RES INST PHYS,H-1525 BUDAPEST,HUNGARY
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷
关键词：
D O I：
10.1016/0022-3093(89)90145-2
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：304 / 306
页数：3
相关论文
共 50 条
[31]   SHORT-RANGE ORDER IN AMORPHOUS GESE2 [J].
KOKAI, S ;
KIKUCHI, I ;
UEMURA, O ;
SATOW, T .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 108 (02) :K89-K92
[32]   Raman study of photoinduced changes in Cd-doped amorphous GeSe2 films [J].
Azhniuk, Yuriy M. ;
Gomonnai, Alexander, V ;
Kryshenik, Volodymyr M. ;
Lopushansky, Vasyl V. ;
Loya, Vasyl Y. ;
Voynarovych, Ivan M. ;
Zahn, Dietrich R. T. .
MATERIALS TODAY-PROCEEDINGS, 2022, 62 :5759-5762
[33]   Short and intermediate range order in amorphous GeSe2 [J].
Massobrio, Carlo ;
Pasquarello, Alfredo .
PHYSICAL REVIEW B, 2008, 77 (14)
[34]   NEUTRON-DIFFRACTION STUDY OF AMORPHOUS GESE2 [J].
UEMURA, O ;
SAGARA, Y ;
SATOW, T .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02) :K91-K94
[35]   Controlled synthesis of GeSe2 and GeSe nanostructures induced by TBAB [J].
Huan Yang ;
Yue Wu ;
Li-Yan Hu ;
Juan-Juan Wang ;
Fang Wang ;
Xiao-Hong Xu .
Rare Metals, 2023, 42 :189-197
[36]   Controlled synthesis of GeSe2 and GeSe nanostructures induced by TBAB [J].
Yang, Huan ;
Wu, Yue ;
Hu, Li-Yan ;
Wang, Juan-Juan ;
Wang, Fang ;
Xu, Xiao-Hong .
RARE METALS, 2023, 42 (01) :189-197
[37]   Photo-enhanced crystallization by laser irradiation and thermal annealing in amorphous GeSe2 [J].
Sakai, K ;
Maeda, K ;
Yokoyama, H ;
Ikari, T .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2003, 320 (1-3) :223-230
[38]   Annealing time and temperature dependence for photo-induced crystallization in amorphous GeSe2 [J].
Sakai, K ;
Uemoto, T ;
Yokoyama, H ;
Fukuyama, A ;
Yoshino, K ;
Ikari, T ;
Maeda, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :933-937
[39]   The intensity and wavelength dependence for photo-induced crystallization process in amorphous GeSe2 [J].
Sakai, K ;
Maeda, K ;
Yokoyama, H ;
Ikari, T .
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 :226-227
[40]   Pressure-induced amorphization of GeSe2 [J].
Grzechnik, A ;
Grande, T ;
Stolen, S .
JOURNAL OF SOLID STATE CHEMISTRY, 1998, 141 (01) :248-254
12345