共 50 条
- [41] MOBILITY OF CARRIERS IN NORMAL-TYPE ZNSE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (02): : 198 - 199
- [43] CURRENT-VOLTAGE CHARACTERISTIC OF METAL-ALSB POINT CONTACT SOVIET PHYSICS-TECHNICAL PHYSICS, 1958, 3 (05): : 898 - 904
- [45] MAGNETOPLASMA OSCILLATIONS OF CURRENT-VOLTAGE CHARACTERISTIC OF P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (02): : 282 - &
- [46] P Type Point Contact Germanium Detector for Dark Matter Search XXI DAE-BRNS HIGH ENERGY PHYSICS SYMPOSIUM, 2016, 174 : 447 - 452
- [47] CARRIER CONCENTRATION AND THICKNESS MEASUREMENTS OF NORMAL-TYPE GAAS EPITAXIAL LAYER BY CELL VOLTAGE IN ANODIZATION JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (03): : 432 - 434
- [50] INVESTIGATION OF PHOTOCONDUCTIVITY OF GOLD-DOPED NORMAL-TYPE GERMANIUM IN WAVELENGTH RANGE 20-200 MU SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (09): : 1090 - 1092