Structure of oxidized silicon film

被引：3
|
作者：
Kamogawa, H [1 ]
机构：
[1] Tokyo Elect Co, Res Lab, Kawasaki, Japan
来源：
PHYSICAL REVIEW | 1938年 / 54卷 / 01期
关键词：
D O I：
10.1103/PhysRev.54.91
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：91 / 91
页数：1
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