Structure of oxidized silicon film

被引：3

作者：

Kamogawa, H ^{[1
]}

机构：

[1] Tokyo Elect Co, Res Lab, Kawasaki, Japan

来源：

PHYSICAL REVIEW | 1938年 / 54卷 / 01期

关键词：

D O I：

10.1103/PhysRev.54.91

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：91 / 91

页数：1

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