GENERATION OF ELECTRON TRAPS AT HIGH-FIELD IN SILICON-OXIDE FILMS

被引：5
|
作者：
YANG, BL
WONG, H
CHENG, YC
机构：
[1] Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue
来源：
CHINESE PHYSICS LETTERS | 1995年 / 12卷 / 07期
关键词：
D O I：
10.1088/0256-307X/12/7/010
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Temperature dependences of the high-held electron trapping in a SiO2 thin him for temperature ranging from 100 to 423K are investigated. It is found that in the investigated temperature range, when the temperature decreases the effective surface density of the electron traps in the him decreases; the energy levels of the effective electron traps at high held concentrate at very narrow energy range. The thermal generation rate is found to be 1.283x10(10)/cm(2) . K and its activation energy is 0.192 eV. Eased on these results, a model for the electron traps generated st high field in thin oxide is proposed.
引用
收藏
页码：420 / 423
页数：4
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