FANO INTERFERENCE OF THE RAMAN PHONON IN HEAVILY BORON-DOPED DIAMOND FILMS GROWN BY CHEMICAL-VAPOR-DEPOSITION

被引：178

作者：

AGER, JW ^{[1
]}

WALUKIEWICZ, W ^{[1
]}

MCCLUSKEY, M ^{[1
]}

PLANO, MA ^{[1
]}

LANDSTRASS, MI ^{[1
]}

机构：

[1] CRYSTALLUME,SANTA CLARA,CA 95054

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.114031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of boron-doped polycrystalline diamond films grown by direct current and microwave plasma deposition was studied with Raman and infrared (IR) absorption spectroscopy. A Fano line shape is observed in the Raman spectra for films with a boron concentration in a narrow range near 1021 cm-3. The appearance of the Fano line shape is correlated with the disappearance of discrete electronic transitions of the boron acceptor observed in the IR spectrum and the shift of the broadened peak to lower energy. The Fano interaction is attributed to a quantum mechanical interference between the Raman phonon (0.165 eV) and transitions from the broadened impurity band to continuum states composed of excited acceptor and valence band states. © 1995 American Institute of Physics.

引用

页码：616 / 618

页数：3

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