We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the home TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages of these TFTs have been discussed. The SIPOS film was fabricated using ArF excimer-laser crystallization of Si in oxygen ambient for application to the home TFT. It was found that both the on-current and the off-current can be controlled by crystallization conditions.