SEMIINSULATING POLYSILICON THIN-FILM-TRANSISTOR - A PROPOSED THIN-FILM-TRANSISTOR

被引:0
|
作者
CHOI, K
MATSUMURA, M
机构
[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 7A期
关键词
SIPOS FILM; POLYSILICON; THIN-FILM TRANSISTOR; EXCIMER LASER CRYSTALLIZATION; DISPLAY;
D O I
10.1143/JJAP.34.3497
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the home TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages of these TFTs have been discussed. The SIPOS film was fabricated using ArF excimer-laser crystallization of Si in oxygen ambient for application to the home TFT. It was found that both the on-current and the off-current can be controlled by crystallization conditions.
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页码:3497 / 3499
页数:3
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