EFFECT OF PLASMA-GENERATED HYDROGEN RADICALS ON THE GROWTH OF GAAS USING TRIMETHYLGALLIUM

被引：6

作者：

SATO, M

机构：

[1] NTT Basic Research Laboratories, Atsugi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 1B期

关键词：

MOCVD; MOVPE; GAAS; HYDROGEN RADICAL; TMG DECOMPOSITION; GROWTH KINETICS; CARBON INCORPORATION;

D O I：

10.1143/JJAP.34.L93

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrogen radicals on the metalorganic chemical vapor deposition of GaAs was investigated by introducing radicals using a downstream-type plasma-cracking cell. The hydrogen radicals enhanced the decomposition of trimethylgallium at the substrate surface. The increase in the growth rates with increasing radical flux at low temperatures, where growth was kinetically-controlled, and the reduction in carbon concentrations in GaAs grown at high temperatures with the addition of radicals were observed.

引用

页码：L93 / L96

页数：4

共 14 条

[1]

ANNAPRAGADA AV, 1991, MATER RES SOC SYMP P, V222, P81, DOI 10.1557/PROC-222-81

[2] MORPHOLOGICAL-CHANGES IN SILVER FOIL IN MICROWAVE GENERATED OXYGEN AND ARGON PLASMAS [J].

CHOU, CH ;

PHILLIPS, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (05) :2727-2736

[3] PLATINUM METAL ETCHING IN A MICROWAVE OXYGEN PLASMA [J].

CHOU, CH ;

PHILLIPS, J .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2415-2423

[4] EFFECT OF HYDROGEN RADICALS ON THE REDUCTION OF CARBON INCORPORATION INTO GAAS GROWN BY USING TRIMETHYLGALLIUM [J].

GOTO, S ;

NOMURA, Y ;

MORISHITA, Y ;

KATAYAMA, Y ;

OHNO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7A) :3825-3829

[5] ABINITIO MOLECULAR-ORBITAL STUDY ON THE REACTION OF TRIMETHYLALUMINUM WITH AN H-RADICAL [J].

HIRAOKA, YS ;

MASHITA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (11) :3703-3706

[6] PYROLYSIS OF TRIMETHYLGALLIUM ON (001) GAAS SURFACE INVESTIGATED BY SURFACE PHOTOABSORPTION [J].

KOBAYASHI, N ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (3A) :L319-L321

[7] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS [J].

PUTZ, N ;

HEINECKE, H ;

HEYEN, M ;

BALK, P ;

WEYERS, M ;

LUTH, H .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) :292-300

[8] GROWTH-RATE OF GAAS EPITAXIAL-FILMS GROWN BY MOCVD [J].

SATO, M ;

SUZUKI, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) :1540-1548

[9] EFFECT OF PRECRACKING OF ORGANOMETALLICS AND ARSINE ON GROWTH OF GAAS [J].

SATO, M ;

KOBAYASHI, N ;

HORIKOSHI, Y .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :221-225

[10] ADSORPTION AND DECOMPOSITION OF ORGANOMETALLICS ON GAAS-SURFACES IN LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SATO, M ;

WEYERS, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (11B) :L1911-L1913

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