ELECTRON-BEAM-INDUCED CURRENT STUDIES OF DEFECT-INDUCED CONDUCTIVITY INVERSION

被引：0

作者：

RADZIMSKI, ZJ

BUCZKOWSKI, A

ZHOU, TQ

DUBE, C

ROZGONYI, GA

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[2] MOBIL SOLAR RES CORP,BILLERICA,MA 01821

来源：

SCANNING MICROSCOPY | 1993年 / 7卷 / 02期

关键词：

ELECTRON BEAM INDUCED CURRENT; DEFECT ELECTRICAL ACTIVITY; IMPURITY GETTERING; MISFIT DISLOCATIONS; HETEROEPITAXY;

D O I：

暂无

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Defect induced inversion of conductivity type was studied both at the surface and at a network of interfacially confined misfit dislocations in heteroepitaxial Si(Ge) on Si structures. The inversion was achieved by controlled contamination with Au and Ni metallic impurities introduced by diffusion from backside evaporated layers. A theoretical explanation of the defect electrical activity and the inversion effect is presented, along with temperature dependent beam induced current observations.

引用

页码：513 / 521

页数：9

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