MECHANISM OF IMPURITY DIFFUSION IN SILICON

被引：13
作者：
DOBSON, PS
机构：
来源：
PHILOSOPHICAL MAGAZINE | 1972年 / 26卷 / 06期
关键词：
D O I：
10.1080/14786437208220343
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1301 / &
相关论文
共 10 条
[1]  
ATALLA MM, 1960, PROPERTIES ELEMENTAL, V5, P163
[2]   EFFECT OF OXIDATION ON ANOMALOUS DIFFUSION IN SILICON [J].
DOBSON, PS .
PHILOSOPHICAL MAGAZINE, 1971, 24 (189) :567-&
[3]   DONOR DIFFUSION DYNAMICS IN SILICON [J].
GHOSHTAGORE, RN .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :397-+
[4]   INTRINSIC DIFFUSION OF BORON AND PHOSPHORUS IN SILICON FREE FROM SURFACE EFFECTS [J].
GHOSHTAGORE, RN .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :389-+
[5]   EXPERIMENTAL-CONDITION DEPENDENCE OF PHOSPHORUS DIFFUSIVITY IN SILICON [J].
GHOSTAGORE, RN .
PHYSICAL REVIEW LETTERS, 1970, 25 (13) :856-+
[6]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[7]  
LACHAPPELLE TJ, 1957, AF18603117 CONTR
[8]   OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].
SANDERS, IR ;
DOBSON, PS .
PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&
[9]   In honour of Prof. Dr. Dr. h. c. Alfred Seeger - on the occasion of his 80th birthday [J].
Stutzmarm, Martin .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09) :3024-3026
[10]   DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].
TANNENBAUM, E .
SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :123-132
1