ELECTROMAGNETIC THEORY OF THE SEMICONDUCTOR JUNCTION LASER

被引：48

作者：

MCWHORTER, AL

机构：

来源：

SOLID-STATE ELECTRONICS | 1963年 / 6卷 / 05期

关键词：

D O I：

10.1016/0038-1101(63)90025-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：417 / 423

页数：7

共 10 条

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DURAFFOURG, G .

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[2]

GALEENER FL, 1963, PHYS REV LETT, V10, P472

[3] COHERENT LIGHT EMISSION FROM P-N JUNCTIONS [J].

HALL, RN .

SOLID-STATE ELECTRONICS, 1963, 6 (05) :405-&

[4]

HALL RN, UNPUB J APPL PHYS

[5] PAIR SPECTRA IN GAP [J].

HOPFIELD, JJ ;

GERSHENZON ;

THOMAS, DG .

PHYSICAL REVIEW LETTERS, 1963, 10 (05) :162-&

[6] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J].

LASHER, GJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :58-61

[7] THEORY OF SEMICONDUCTOR MASER OF GAAS [J].

MCWHORTER, AL ;

ZEIGER, HJ ;

LAX, B .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :235-&

[8] RECOMBINATION RADIATION AND STIMULATED EMISSION IN GAAS [J].

NATHAN, MI .

SOLID-STATE ELECTRONICS, 1963, 6 (05) :425-&

[9] DIELECTRIC-WAVEGUIDE MODE OF LIGHT PROPAGATION IN P-N JUNCTIONS [J].

YARIV, A ;

LEITE, RCC .

APPLIED PHYSICS LETTERS, 1963, 2 (03) :55-57

[10]

ZEIGER HJ, UNPUB

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