X-RAY-FLUORESCENCE SPECTROSCOPY OF CU-IN-SE CHALCOPYRITE-STRUCTURE THIN-FILMS

被引：0

作者：

KOHIKI, S ^{[1
]}

NISHITANI, M ^{[1
]}

NEGAMI, T ^{[1
]}

WADA, T ^{[1
]}

SAKAI, M ^{[1
]}

GOHSHI, Y ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT IND CHEM,TOKYO 113,JAPAN

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.46.7911

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In x-ray fluorescence spectroscopy we have observed a positive shift of the Cu L(alpha) x-ray energy with an increase of the number of excess electrons in the electron-doped Cu-In-Se chalcopyrite-structure thin films. This positive shift can be reproduced well by the energy calculation using the Hartree-Fock-Slater method by taking into account the Cu 4s-3d rehybridization effect. We discovered that the excess electrons entered into the lower conduction band dominated by the Cu 4s orbital in the n-type Cu-In-Se thin films deposited by a molecular-beam method.

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收藏

页码：7911 / 7914

页数：4

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