BARRIER DETERMINATIONS ON GE-ALX GA1-XAS AND GAAS-ALX GA1-XAS P-N HETEROJUNCTIONS

被引：13

作者：

HOWARTH, DS ^{[1
]}

FEUCHT, DL ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,ELECT ENGN DEPT,PITTSBURGH,PA 15213

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 07期

关键词：

D O I：

10.1063/1.1654921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：365 / 367

页数：3

共 9 条

[1]

ALFEROV ZI, 1970, P INT C PHYS CHEM SE, V2, P7

[2] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J].

CASEY, HC ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4910-&

[3] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J].

DINAN, JH ;

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1971, 26 (02) :587-&

[4]

HOWARTH DS, 1972, THESIS CARNEGIE MELL

[5] AN OPTOELECTRONIC COLD CATHODE USING AN ALXGA1-XAS HETEROJUNCTION STRUCTURE [J].

KRESSEL, H ;

KOHN, ES ;

NELSON, H ;

TIETJEN, JJ ;

WEISBERG, LR .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :359-&

[6]

Milnes A. G., 1972, Heterojunctions and Metal-Semiconductor Junctions, DOI DOI 10.1016/j.nima.2004.05.071

[7] DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/CM2 [J].

PANISH, MB ;

HAYASHI, I ;

SUMSKI, S .

APPLIED PHYSICS LETTERS, 1970, 16 (08) :326-&

[8] GRADED-GAP ALXGA1-XAS-GAAS HETEROJUNCTION [J].

WOMAC, JF ;

REDIKER, RH .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4129-&

[9]

WOODALL JM, 1972, J ELECTROCHEM SOC, V119, P986

← 1 →