STRUCTURAL RELAXATION AS A TOOL FOR PROBING THE ORIGIN OF ELECTRONIC GAP STATES IN AMORPHOUS CHALCOGENIDES

被引:26
作者
ABKOWITZ, M
ENCK, RC
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D O I
10.1016/0022-3093(80)90303-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:831 / 836
页数:6
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