TEMPERATURE-DEPENDENCE OF THE EXCITON LIFETIME IN HIGH-PURITY SILICON

被引：59

作者：

HAMMOND, RB ^{[1
]}

SILVER, RN ^{[1
]}

机构：

[1] UNIV CALIF LOS ALAMOS SCI LAB,DIV THEORET,LOS ALAMOS,NM 87545

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 01期

关键词：

D O I：

10.1063/1.91277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：68 / 71

页数：4

共 19 条

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[2]

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[5]

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SOLID STATE COMMUNICATIONS, 1977, 24 (07) :461-463

[8] ANALYSIS OF LO AND TO PHONON ASSISTED FREE EXCITON LUMINESCENCE IN SILICON [J].

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[9] ONSETS OF THE ELECTRON-HOLE-DROPLET LUMINESCENCE IN SI [J].

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[10]

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