ELECTRICAL TRANSPORT IN THIN-FILMS OF COPPER SILICIDE

被引：74
|
作者：
ABOELFOTOH, MO
KRUSINELBAUM, L
机构：
[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期
关键词：
D O I：
10.1063/1.349280
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical properties of thin films of eta'-Cu3Si phase with a tetragonal crystal structure are reported on. Electrical transport in these films is found to be very sensitive to oxygen exposure. Cu3Si reacts with oxygen at room temperature to form both Si and Cu oxides, resulting in high-room-temperature (approximately 60-mu-OMEGA cm) and even nonmetallic resistivity. This behavior is contrasted with that of low-resistivity (approximately 5-mu-OMEGA cm at room temperature) Cu3Ge, which is inert in an oxygen environment.
引用
收藏
页码：3382 / 3384
页数：3
相关论文
共 50 条
  • [1] ELECTRONIC TRANSPORT AND MICROSTRUCTURE IN MOLYBDENUM SILICIDE THIN-FILMS
    WEINMEISTER, RE
    MAHAN, JE
    APPLIED PHYSICS LETTERS, 1981, 39 (12) : 977 - 979
  • [2] ELECTRONIC TRANSPORT-PROPERTIES OF TUNGSTEN SILICIDE THIN-FILMS
    MARTIN, TL
    MALHOTRA, V
    MAHAN, JE
    JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) : 309 - 325
  • [3] SILICIDE THIN-FILMS IN MICROELECTRONICS
    GERSHINSKII, AE
    RZHANOV, AV
    CHEREPOV, EI
    SOVIET MICROELECTRONICS, 1982, 11 (02): : 51 - 59
  • [4] ELECTRICAL TRANSPORT PROPERTIES OF TUNGSTEN SILICIDE THIN FILMS.
    Li, B.Z.
    Aitken, R.G.
    Applied Physics Letters, 1985, 46 (04) : 401 - 403
  • [5] SILICIDE THIN-FILMS AND THEIR APPLICATIONS IN MICROELECTRONICS
    MURARKA, SP
    INTERMETALLICS, 1995, 3 (03) : 173 - 186
  • [6] FORMATION OF IRON SILICIDE THIN-FILMS
    ZHU, QG
    IWASAKI, H
    WILLIAMS, ED
    PARK, RL
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2629 - 2631
  • [7] ELECTRICAL PROPERTIES OF EVAPORATED THIN-FILMS OF COPPER PHTHALOCYANINE
    SAKAI, Y
    SADAOKA, Y
    YOKOUCHI, H
    BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1974, 47 (08) : 1886 - 1888
  • [8] ELECTRICAL AND OPTICAL-PROPERTIES OF SILICIDE SINGLE-CRYSTALS AND THIN-FILMS
    NAVA, F
    TU, KN
    THOMAS, O
    SENATEUR, JP
    MADAR, R
    BORGHESI, A
    GUIZZETTI, G
    GOTTLIEB, U
    LABORDE, O
    BISI, O
    MATERIALS SCIENCE REPORTS, 1993, 9 (4-5): : 141 - 200
  • [9] PROPERTIES OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS
    CHOW, TP
    BOWER, DH
    VANART, RL
    KATZ, W
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 952 - 956
  • [10] SILICIDE FORMATION IN THIN-FILMS OF MOLYBDENUM OR TUNGSTEN
    OERTEL, B
    KURZE, HJ
    HAUEISEN, H
    THIN SOLID FILMS, 1978, 52 (01) : 129 - 135
12345