ELECTRICAL TRANSPORT IN THIN-FILMS OF COPPER SILICIDE

被引：74
作者：
ABOELFOTOH, MO
KRUSINELBAUM, L
机构：
[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期
关键词：
D O I：
10.1063/1.349280
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical properties of thin films of eta'-Cu3Si phase with a tetragonal crystal structure are reported on. Electrical transport in these films is found to be very sensitive to oxygen exposure. Cu3Si reacts with oxygen at room temperature to form both Si and Cu oxides, resulting in high-room-temperature (approximately 60-mu-OMEGA cm) and even nonmetallic resistivity. This behavior is contrasted with that of low-resistivity (approximately 5-mu-OMEGA cm at room temperature) Cu3Ge, which is inert in an oxygen environment.
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页码：3382 / 3384
页数：3
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