ELECTRONIC STATES ON THE RELAXED (110) SURFACE OF GAAS

被引：60
作者：
CHELIKOWSKY, JR
COHEN, ML
机构：
[1] UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
[2] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DIV MAT & MOLEC RES, BERKELEY, CA 94720 USA
来源：
SOLID STATE COMMUNICATIONS | 1979年 / 29卷 / 03期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0038-1098(79)91053-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electronic structure of the (110) surface of GaAs is analyzed using a surface relaxation model as determined by recent low energy electron diffraction studies. A self-consistent pseudopotential calculation based on this model yields no intrinsic surface states within the fundamental band gap. Moreover, our calculations are in good agreement with recent photo-emission measurements. © 1979.
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收藏
页码：267 / 271
页数：5
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