DIRECT AND INDIRECT OPTICAL ENERGY GAPS OF ALAS

被引：34

作者：

YIM, WM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 07期

关键词：

D O I：

10.1063/1.1660639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2854 / &

共 18 条

[1] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J].

BALSLEV, I .

PHYSICAL REVIEW, 1968, 173 (03) :762-&

[2] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J].

CASEY, HC ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4910-&

[3] ON PREPARATION OPTICAL PROPERTIES AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE [J].

COX, GA ;

CUMMINS, DO ;

KAWABE, K ;

TREDGOLD, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) :543-&

[4] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

THOMAS, DG .

PHYSICAL REVIEW, 1966, 150 (02) :690-&

[5] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

EHRENREICH, H .

PHYSICAL REVIEW, 1960, 120 (06) :1951-1963

[6] A LOW-THRESHOLD ROOM-TEMPERATURE INJECTION LASER [J].

HAYASHI, I ;

PANISH, MB ;

FOY, PW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) :211-&

[7] LOW-THRESHOLD ALX GA1-X AS VISIBLE AND IR-LIGHT-EMITTING DIODE LASERS [J].

KRESSEL, H ;

LOCKWOOD, HF ;

NELSON, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1970, QE 6 (06) :278-&

[8] FABRY-PEROT STRUCTURE ALXGA1-XAS INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLD CURRENT DENSITIES OF 2530 A/CM2 [J].

KRESSEL, H ;

HAWRYLO, FZ .

APPLIED PHYSICS LETTERS, 1970, 17 (04) :169-+

[9] FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP [J].

LORENZ, MR ;

CHICOTKA, R ;

PETTIT, GD ;

DEAN, PJ .

SOLID STATE COMMUNICATIONS, 1970, 8 (09) :693-&

[10]

LORENZ MR, PRIVATE COMMUNICATIO

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