CHEMICALLY-INDUCED GRAIN-BOUNDARY MIGRATION IN DOPED POLYCRYSTALLINE SILICON FILMS

被引：3

作者：

TU, KN

TERSOFF, J

CHOU, TC

WONG, CY

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(88)90499-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：93 / 97

页数：5

共 18 条

[11] DIRECT MEASUREMENT OF ELECTRON-EMISSION FROM DEFECT STATES AT SILICON GRAIN-BOUNDARIES
SEAGER, CH
PIKE, GE
GINLEY, DS
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (07) : 532 - 535
[12] SEAGER CH, 1982, MATER RES SOC S P, V5, P85
[13] ON THE MECHANISM OF DIFFUSION-INDUCED BOUNDARY MIGRATION
SMITH, DA
KING, AH
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (02): : 333 - 340
[14] DIFFUSION OF DONOR ELEMENTS (SB-125, P-32, AS-74(73)) IN POLYCRYSTALLINE SILICON
SPIT, FHM
BAKKER, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01): : 135 - 142
[15] SWALIN RA, 1972, THERMODYNAMICS SOLID, pCH10
[16] KINETICS OF THIN-FILM REACTIONS BETWEEN PB AND AGPD ALLOY
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3400 - 3404
[17] WERNER J, 1982, MATER RES SOC S P, V5, P99
[18] ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE GAAS FILMS
YANG, JJJ
DAPKUS, PD
DUPUIS, RD
YINGLING, RD
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3794 - 3800